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| (R) ISO 9001 Registered Process C3014 CMOS 3m 5 Volt Single Metal Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN N N LeffN WN BVDSSN VTFP(N) Minimum 0.5 42 2.0 12 12 Typical 0.65 0.6 47 2.3 0.7 Maximum 0.8 52 2.6 Unit V V1/2 A/V2 m m V V Comments 100x3m 100x3m 100x100m 100x3m Per side P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP P P LeffP WP BVDSSP VTFP(P) Minimum -0.5 13 2.85 -12 -12 Typical 0.65 0.55 15 3.2 0.9 Maximum -0.8 19 3.55 Unit V V1/2 A/V2 m m V V Comments 100x3m 100x3m 100x100m 100x3m Per side Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Interpoly Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Passivation Thickness Symbol P-well(f) N+ xjN+ P+ xjP+ TGOX TP1P2 POLY1 POLY2 M1 TPASS Minimum 3.2 16 50 44 15 20 Typical 4.8 21 0.8 80 0.7 48 60 22 30 30 200+900 Maximum 6.5 27 100 52 30 40 60 Unit K/ / m / m nm nm / / m/ nm Comments P-well oxide+nit. Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Poly-1 to Poly-2 Symbol COX CM1P CM1S CP1P2 Minimum 0.66 0.026 0.51 Typical 0.72 0.0523 0.030 0.57 Maximum 0.78 0.034 0.63 Unit fF/m2 fF/m2 fF/m2 fF/m2 Comments (c) IMP, Inc. 87 Process C3014 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Metal-1 Width/Space Gate Poly Width/Space N <100> 15 - 25 -cm 5V P-well 1 2 2.0x2.0m 3.5 / 2.5m 4.0 / 2.5m N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 3.0 / 3.0m 12m 2.5m 1.5m 1.0m 1.0m 100x100m 55m 80.0m Special Feature of C3014 Process: P-well analog low threshold process with single metal CMOS 3.0m technology for 5 Volt applications. 88 C3014-4-98 |
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